| PART |
Description |
Maker |
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BGD812 BGD81201 |
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| MHW8272 |
27 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHW8292 |
29 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHW8272A |
27 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| CGD914MI CGD914 CGD914_MI_6 CGD914-2015 |
860 MHz, 20 dB gain power doubler amplifier
From old datasheet system
|
Quanzhou Jinmei Electro...
Philips
|
| BGD816L BGD816L_5 BGD816L01 |
860 MHz, 21.5 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| MHW8222B |
MHW8222B 860 MHz, 22.7 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| ANPC-171G ANPC-176G ANPC-174G ANPC-175G ANPC-172G |
Transformer, CCFL, SMT, RoHS
2400 MHz - 2500 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
1710 MHz - 1880 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
1850 MHz - 1990 MHz ANTENNA-OTHER, 7 dBi GAIN, 70 deg 3dB BEAMWIDTH
Picocell Antennas 微微蜂窝天线
|
M/A-COM Technology Solutions, Inc.
Method Electronics, Inc.
3M Company
霍尼韦尔
FIBOX
Advanced Interconnections, Corp.
|
